Automatic detection of NPN, PNP, N- and P-channel MOSFETs, JFETs, diodes and small thyristors, TRIACs.

Automatic detection of pin assignments, which means that the DUT can be connected to the tester in any order.

Measurement of hFE and base-emitter voltage for bipolar transistors, also for Darlington.

Automatic detection of protective diodes in bipolar transistors and MOSFETs.

A bipolar junction transistor is defined as a parasitic transistor (NPNp = NPN + parasitic PNP).

Up to two resistors with a resolution of up to 0.1 ohm will be measured.

Measurement range up to 50 MOhm (Megaohm).

Resistors below 10 ohms will be measured using the ESR method and a resolution of 0.01 ohms.

Caution: at this resolution, it may give distorted data.

Capacitors ranging from 35 pF (picofarad) to 100 mF (millifarad) can be measured with a resolution of up to 1 pF (0.01 pF for capacitors less than 100 pF).

Resistors and capacitors will be displayed with their respective symbols, pin numbers and values.

Up to two diodes will also be displayed with correctly aligned symbols, pin numbers and voltage drop.

If it is a single diode, parasitic capacitance and reverse current will also be measured. Inductances from 0.01mH to 20H can be detected and measured.

Built-in measurement of ESR (equivalent series resistance) of capacitors over 20 nF.

The resolution is 0.01 ohm.

At lower capacitance values, the accuracy of the ESR result deteriorates.

Capacitor losses greater than 5 nF are considered.

Thus, its quality factor can be assessed.